SAMSUNG SSD 990 EVO PLUS M.2 PCIE 1TB
Pcode
31291
£95.32
In stock
The Samsung 990 EVO Plus 1 TB M.2 NVMe SSD offers cutting-edge performance with PCIe 4.0 x4 and PCIe 5.0 x2 compatibility. Boasting sequential read speeds of up to 7,150 MB/s and write speeds of 6,300 MB/s, this SSD delivers rapid data transfer and reduced load times. Powered by Samsung’s 8th-gen V-NAND, an efficient nickel-coated controller, and DRAM-less Host Memory Buffer (HMB) architecture, it combines high-speed capability and energy efficiency. Ideal for gamers, creators, and professionals, it’s also backed by Samsung's Magician software suite and a 5-year warranty for secure, long-lasting use.
Categories: Components, Storage, Solid State Drives
The Samsung 990 EVO Plus 1TB M.2 NVMe SSD offers cutting-edge performance with PCIe 4.0 x4 and PCIe 5.0 x2 compatibility. Boasting sequential read speeds of up to 7,150 MB/s and write speeds of 6,300 MB/s, this SSD delivers rapid data transfer and reduced load times. Powered by Samsung’s 8th-gen V-NAND, an efficient nickel-coated controller, and DRAM-less Host Memory Buffer (HMB) architecture, it combines high-speed capability and energy efficiency. Ideal for gamers, creators, and professionals, it’s also backed by Samsung's Magician software suite and a 5-year warranty for secure, long-lasting use.
Key Features
- High-speed storage: Up to 7,150 MB/s read, 6,300 MB/s write
- DRAM-less with HMB: Efficient Host Memory Buffer improves responsiveness
- 8th-gen V-NAND TLC and nickel-coated controller for better thermal control
- TurboWrite 2.0 maintains fast sustained write performance via dynamic SLC buffer
- Magician software for firmware updates, drive health monitoring, and encryption
- Robust endurance & security: 600 TBW rating and AES-256 encryption + TCG/Opal support
- 5‑year limited warranty ensures long-term reliability
Specifications
- Model: Samsung 990 EVO Plus
- Form Factor: M.2 2280 (80 × 22 × 2.38 mm)
- Interface: PCIe Gen 4.0 x4 / Gen 5.0 x2, NVMe 2.0
- Capacity: 1 TB (model code MZ‑V9S1T0)
- NAND: 8th-generation Samsung V-NAND TLC
- Controller: Samsung in-house (5 nm), nickel-coated
- Cache: Host Memory Buffer (HMB), no onboard DRAM
Sequential Performance:
- Read: up to 7,150 MB/s
- Write: up to 6,300 MB/s
Random IOPS (QD32):
- Read: up to 850,000 IOPS
- Write: up to 1,350,000 IOPS
| Part Number | MZ-V9S1T0BW |
|---|---|
| EAN / UPC | 8806095575674 |
| Flash Capacity | 1TB |
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