SAMSUNG SSD 990 EVO PLUS M.2 PCIE 1TB

Pcode
31291
£95.32
In stock
The Samsung 990 EVO Plus 1 TB M.2 NVMe SSD offers cutting-edge performance with PCIe 4.0 x4 and PCIe 5.0 x2 compatibility. Boasting sequential read speeds of up to 7,150 MB/s and write speeds of 6,300 MB/s, this SSD delivers rapid data transfer and reduced load times. Powered by Samsung’s 8th-gen V-NAND, an efficient nickel-coated controller, and DRAM-less Host Memory Buffer (HMB) architecture, it combines high-speed capability and energy efficiency. Ideal for gamers, creators, and professionals, it’s also backed by Samsung's Magician software suite and a 5-year warranty for secure, long-lasting use.

The Samsung 990 EVO Plus 1TB M.2 NVMe SSD offers cutting-edge performance with PCIe 4.0 x4 and PCIe 5.0 x2 compatibility. Boasting sequential read speeds of up to 7,150 MB/s and write speeds of 6,300 MB/s, this SSD delivers rapid data transfer and reduced load times. Powered by Samsung’s 8th-gen V-NAND, an efficient nickel-coated controller, and DRAM-less Host Memory Buffer (HMB) architecture, it combines high-speed capability and energy efficiency. Ideal for gamers, creators, and professionals, it’s also backed by Samsung's Magician software suite and a 5-year warranty for secure, long-lasting use.

Key Features

  • High-speed storage: Up to 7,150 MB/s read, 6,300 MB/s write
  • DRAM-less with HMB: Efficient Host Memory Buffer improves responsiveness
  • 8th-gen V-NAND TLC and nickel-coated controller for better thermal control
  • TurboWrite 2.0 maintains fast sustained write performance via dynamic SLC buffer
  • Magician software for firmware updates, drive health monitoring, and encryption
  • Robust endurance & security: 600 TBW rating and AES-256 encryption + TCG/Opal support
  • 5‑year limited warranty ensures long-term reliability

Specifications

  • Model: Samsung 990 EVO Plus
  • Form Factor: M.2 2280 (80 × 22 × 2.38 mm)
  • Interface: PCIe Gen 4.0 x4 / Gen 5.0 x2, NVMe 2.0
  • Capacity: 1 TB (model code MZ‑V9S1T0)
  • NAND: 8th-generation Samsung V-NAND TLC
  • Controller: Samsung in-house (5 nm), nickel-coated
  • Cache: Host Memory Buffer (HMB), no onboard DRAM

Sequential Performance:

  • Read: up to 7,150 MB/s
  • Write: up to 6,300 MB/s

Random IOPS (QD32):

  • Read: up to 850,000 IOPS
  • Write: up to 1,350,000 IOPS
Part Number MZ-V9S1T0BW
EAN / UPC 8806095575674
Flash Capacity 1TB